? semiconductor components industries, llc, 2013 december, 2013 ? rev. 3 1 publication order number: nsm80100m/d NSM80100MT1G pnp transistor with dual series switching diode features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant typical applications ? lcd control board ? high speed switching ? high voltage switching maximum ratings ? pnp transistor rating symbol value unit collector ? emitter voltage v ceo ? 80 vdc collector ? base voltage v cbo ? 80 vdc emitter ? base voltage v ebo ? 4.0 vdc collector current ? continuous i c ? 500 madc maximum ratings ? switching diode rating symbol value unit reverse voltage v r 100 v forward current i f 200 ma non ? repetitive peak forward current (square wave, t j = 25 c prior to surge) t < 1 sec t = 1 sec i fsm 1.0 20 a operating and storage junction temperature range t j , t stg ? 55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. esd ratings rating class value electrostatic discharge hbm mm 3a m4 4000 v failure < 8000 v failure > 400 v thermal characteristics rating symbol max unit total device dissipation fr ? 5 board, (note 1) @ t a = 25 c derate above 25 c p d 400 mw mw/ c thermal resistance from junction ? to ? ambient (note 1) r ja 313 c/w total device dissipation fr ? 5 board (note 2) t a = 25 c derate above 25 c p d 270 mw mw/ c thermal resistance, junction ? to ? ambient (note 2) r ja 463 c/w junction and storage temperature range t j , t stg ? 55 to +150 c 1. fr ? 5 = 650 mm 2 pad, 2.0 oz cu. 2. fr ? 5 = 10 mm 2 pad, 2.0 oz cu. http://onsemi.com device package shipping ? ordering information sc ? 74 case 318f 1 2 4 pnp transistor with dual series switching diode 3 5 6 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. marking diagram NSM80100MT1G sc ? 74 (pb ? free) 3000 / tape & reel 3pn m 3pn = device code m = date code* = pb ? free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. 1 23 654 d2 q1 d1
NSM80100MT1G http://onsemi.com 2 q1: pnp transistor electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 3) (i c = ? 1.0 ma, i b = 0) v (br)ceo ? 80 ? v emitter ? base breakdown voltage (i e = ? 100 a, i c = 0) v (br)ebo ? 4.0 ? v collector cutoff current (v ce = ? 60 v, i b = 0) i ces ? ? 0.1 a collector cutoff current (v cb = ? 80 v, i e = 0) i cbo ? ? 0.1 a on characteristics (note 3) dc current gain (i c = ? 10 ma, v ce = ? 1.0 v) h fe 120 ? ? collector ? emitter saturation voltage (i c = ? 100 ma, i b = ? 10 ma) v ce(sat) ? ? 0.25 v base ? emitter saturation voltage (i c = ? 100 ma, v ce = ? 1.0 v) v be(sat) ? ? 1.2 v small ? signal characteristics current ? gain ? bandwidth product (note 4) (i c = ? 100 ma, v ce = ? 2.0 v, f = 100 mhz) f t 150 ? mhz 3. pulse test: pulse width 300 s, duty cycle 2.0%. 4. ft is defined as the frequency at which |h fe | extrapolates to unity. d1, d2: switching diode (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics reverse breakdown voltage v (br) 75 ? v reverse voltage leakage current (v r = 75 v) (v r = 20 v, t j = 150 c) (v r = 75 v, t j = 150 c) i r ? ? ? 1.0 30 100 a diode capacitance (v r = 0 v, f = 1.0 mhz) c d ? 1.5 pf forward voltage (i f = 1.0 ma) (i f = 10 ma) (i f = 50 ma) (i f = 150 ma) v f ? ? ? ? 715 855 1000 1250 mv reverse recovery time (i f = i r = 10 ma, i r(rec) = 1.0 ma, r l = 100 ) t rr ? 4.0 ns forward recovery voltage (i f = 10 ma, t r = 20 ns) v fr ? 1.75 v product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
NSM80100MT1G http://onsemi.com 3 typical characteristics figure 1. current ? gain ? bandwidth product figure 2. capacitance i c , collector current (ma) -100 -200 -10 200 100 70 50 20 v r , reverse voltage (volts) -1.0 -100 -0.1 100 70 50 30 20 10 -2.0 v ce = -2.0 v t j = 25 c f t , current-gain - bandwidth product (mhz ) c, capacitance (pf) -2.0 -3.0 -5.0 -7.0 -20 -30 -50 -70 30 7.0 5.0 -0.2 -0.5 -5.0 -10 -20 -50 t j = 25 c c ibo c obo figure 3. switching time i c , collector current (ma) -10 -5.0 500 200 100 50 20 10 -100 t, time (ns) -50 -200 -500 1.0 k 300 700 70 30 -7.0 -300 -70 -20 -30 v cc = -40 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f t r t d @ v be(off) = -0.5 v figure 4. dc current gain -2.0 -500 -0.5 i c , collector current (ma) 400 200 100 80 60 40 -10 , dc current gain t j = 125 c -1.0 -5.0 v ce = -1.0 v -20 -100 -50 -200 h fe 25 c -55 c figure 5. collector emitter saturation voltage vs. collector current figure 6. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.01 0.1 1 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.4 0.6 0.7 0.8 1.0 1.1 v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) i c /i b = 10 150 c 25 c ? 55 c 0.5 0.9 i c /i b = 10 150 c 25 c ? 55 c
NSM80100MT1G http://onsemi.com 4 typical characteristics figure 7. base emitter voltage vs. collector current i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.9 1.1 1.2 v be(on) , base ? emitter voltage (v) 0.4 0.8 1.0 v ce = 1 v 150 c 25 c ? 55 c figure 8. collector saturation region figure 9. base ? emitter temperature coefficient figure 10. safe operating area v ce , collector emitter voltage (v) 100 10 1 0.1 0.001 0.01 0.1 1 i c , collector current (a) thermal limit 100 ms 1 s 10 ms 1 ms i b , base current (ma) , collector-emitter voltage (volts) v ce -0.1 -10 -0.05 -1.0 -0.8 -0.6 -0.4 -0.2 0 -1.0 t j = 25 c -50 i c = -100 ma i c = -50 ma i c = -250 ma i c = -500 ma i c = -10 ma -20 -2.0 -5.0 -0.2 -0.5 i c , collector current (ma) r vb , temperature coefficient (mv/ c) -100 -500 -0.5 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -10 r vb for v be -1.0 -2.0 -5.0 -20 -50 -200 temperature ( c) p d , power dissipation (mw) 0 20 40 60 80 100 120 140 160 figure 11. operating temperature derating 400 300 200 100 0
NSM80100MT1G http://onsemi.com 5 typical characteristics v f , forward voltage (v) v r , reverse voltage (v) figure 12. forward voltage figure 13. leakage current figure 14. capacitance 0.1 1 10 100 1000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t a = 85 c t a = 55 c t a = 25 c t a = ? 40 c t a = ? 55 c t a = 150 c i f , forward current (ma) t a = 125 c 0.001 0.01 0.1 1.0 10 100 0 10203040506070 t a = 85 c t a = 55 c t a = 125 c t a = 150 c t a = 25 c i r , reverse current ( a) 0.45 0.47 0.49 0.51 0.53 0.55 0.57 0.59 0.61 012345678 v r , reverse voltage (v) c d , diode capacitance (pf) 0 1.1 1.2 t a , derated ambient temperature ( c) v r , dc reverse voltage (v) 0 25 50 75 100 125 150 175 figure 15. diode power dissipation curve 100 75 50 25 0
NSM80100MT1G http://onsemi.com 6 package dimensions sc ? 74 case 318f ? 05 issue n 23 4 5 6 d 1 e b e a1 a 0.05 (0.002) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318f ? 01, ? 02, ? 03 obsolete. new standard 318f ? 04. c l h e dim a min nom max min millimeters 0.90 1.00 1.10 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.25 0.37 0.50 0.010 c 0.10 0.18 0.26 0.004 d 2.90 3.00 3.10 0.114 e 1.30 1.50 1.70 0.051 e 0.85 0.95 1.05 0.034 0.20 0.40 0.60 0.008 0.039 0.043 0.002 0.004 0.015 0.020 0.007 0.010 0.118 0.122 0.059 0.067 0.037 0.041 0.016 0.024 nom max 2.50 2.75 3.00 0.099 0.108 0.118 h e ? ? l 0 10 0 10 0.7 0.028 1.9 0.074 0.95 0.037 2.4 0.094 1.0 0.039 0.95 0.037 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nsm80100m/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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